2N656 Datasheet (Motorola)

2N656, NPN Transistor

2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS .

NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications.

High Collector Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR TRAN~STORS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Devi