Datasheet Details
| Part number | 2N6561 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 213.88 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2N6561-INCHANGE.pdf
|
| Part number | 2N6561 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 213.88 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2N6561-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 22
📁 2N6561 Similar Datasheet