Datasheet4U Logo Datasheet4U.com

2N6561 Silicon NPN Power Transistor

📥 Download Datasheet Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=300V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

📥 Download Datasheet

Preview of 2N6561 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2N6561
Manufacturer
INCHANGE
File Size
213.88 KB
Datasheet
2N6561-INCHANGE.pdf
Description
Silicon NPN Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=2

2N6561 Distributors

📁 Related Datasheet

  • 2N656 - NPN Transistor (Motorola)
  • 2N6560 - Bipolar NPN Device (Seme LAB)
  • 2N6562 - NPN Transistor (SSDI)
  • 2N6563 - NPN Transistor (SSDI)
  • 2N6566 - NPN/PNP Switching Transistor (CRYSTALONCS)
  • 2N6567 - NPN/PNP Switching Transistor (CRYSTALONCS)

📌 All Tags

Silicon NPN Power Transistor INCHANGE
INCHANGE 2N6561-like datasheet