2N6561 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=300V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

📥 Download Datasheet

2N6561 Datasheet Preview — Preview of 2N6561 PDF

Datasheet Specifications

Part number: 2N6561
Manufacturer: INCHANGE
File Size: 213.88 KB
Datasheet: 2N6561-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=2

2N6561 Distributors

📁 Related Datasheet

2N656 2N6560 2N6562 2N6563 2N6566 2N6567

📌 All Tags

2N6561 Silicon NPN Power Transistor INCHANGE

INCHANGE 2N6561-like datasheet