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2N6561

Silicon NPN Power Transistor

2N6561 General Description

*Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) *Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS *Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Vol.

2N6561 Datasheet (213.88 KB)

Preview of 2N6561 PDF

Datasheet Details

Part number:

2N6561

Manufacturer:

INCHANGE

File Size:

213.88 KB

Description:

Silicon npn power transistor.

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