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2N6703 - Silicon NPN Power Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and

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Datasheet Details

Part number 2N6703
Manufacturer INCHANGE
File Size 192.27 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6703 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.
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