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2SB1383 PNP Transistor

2SB1383 Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain : hFE= 2000(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min). Complement.

2SB1383 Applications

* Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -25 A I

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Datasheet Details

Part number
2SB1383
Manufacturer
INCHANGE
File Size
214.43 KB
Datasheet
2SB1383-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1383-like datasheet