Datasheet4U Logo Datasheet4U.com

2SB1392 PNP Transistor

2SB1392 Description

isc Silicon PNP Power Transistor 2SB1392 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min. Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfo.

2SB1392 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector C

📥 Download Datasheet

Preview of 2SB1392 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SB1392
Manufacturer
INCHANGE
File Size
196.80 KB
Datasheet
2SB1392-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1390 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB139040ML - SCHOTTKY BARRIER DIODE (Silan Microelectronics)
  • 2SB139060ML - SCHOTTKY BARRIER DIODE (Silan Microelectronics)
  • 2SB1391 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB139100MA - LOW IR SCHOTTKY BARRIER DIODE (Silan Microelectronics)
  • 2SB1393 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1393A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1394 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1392-like datasheet