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2SB1393 PNP Transistor

2SB1393 Description

isc Silicon PNP Power Transistor 2SB1393 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min. Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= -1.

2SB1393 Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Coll

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Datasheet Details

Part number
2SB1393
Manufacturer
INCHANGE
File Size
213.62 KB
Datasheet
2SB1393-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1393-like datasheet