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2SB1647 PNP Transistor

2SB1647 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collecto.

2SB1647 Applications

* Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A

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Datasheet Details

Part number
2SB1647
Manufacturer
INCHANGE
File Size
234.78 KB
Datasheet
2SB1647-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1647-like datasheet