2SB1647 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collecto.

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Datasheet Specifications

Part number: 2SB1647
Manufacturer: INCHANGE
File Size: 234.78 KB
Datasheet: 2SB1647-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A

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2SB1647 PNP Transistor INCHANGE

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