2SB1647
INCHANGE
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Pnp transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) *High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) *Low Col
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2SB1640 - Silicon PNP Transistor
(Toshiba Semiconductor)
2SB1640
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1640
Audio Frequency Power Amplifier
Unit: mm • • • Low saturation voltage: VCE (sat) .
2SB1640 - PNP Transistor
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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector to Emitter Saturation Vo.
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..
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2SB1641 - Silicon PNP Epitaxial Transistor
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Free Datasheet http://../
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2SB1642 - Silicon PNP Transistor
(Toshiba Semiconductor)
.
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(SavantIC)
SavantIC Semiconductor
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Silicon PNP Power Transistors
2SB1642
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2SB1642 - PNP Transistor
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isc Silicon PNP Power Transistor
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2SB1643 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1643
Silicon PNP epitaxial planar type
For power amplification
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Fea.
2SB1643 - Silicon PNP epitaxial planar type Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxial Planar Type 2SB1643
TO-252
+0.15 1.50 -0.15
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Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
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High collecto.
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2SB1644
Features 1) Low saturation voltage.
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