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2SB1640 - Silicon PNP Transistor

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Part number 2SB1640
Manufacturer Toshiba Semiconductor
File Size 138.11 KB
Description Silicon PNP Transistor
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2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • • • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) Collector metal (fin) is covered with mold region. Complementary to 2SD2525 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −60 −60 −7 −3 −6 −0.5 1.8 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10T1A Weight: 1.5 g (typ.
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