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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1667(SM)
2SB1667(SM)
Audio Frequency Power Amplifier Applications
Unit: mm
• Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
PC
−60 −60 −7 −3 −0.5 1.5 25
V V V A A
W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10S2A
temperature/current/voltage and the significant change in temperature, etc.
2SB1667 Datasheet
