2SB1667 Datasheet - Toshiba Semiconductor

2SB1667 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applications Unit: mm Low saturation voltage: VCE (sat) = 1.7 V (max) (IC = 3 A, IB = 0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC .

2SB1667 Features

* ological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or t

2SB1667_ToshibaSemiconductor.pdf