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2SB1015A Datasheet - Toshiba Semiconductor

2SB1015A Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications Low collector saturation voltage: VCE (sat) = 1.7 V (max) (IC = 3 A, IB = 0.3 A) Collector power dissipation: PC = 25 W (Tc = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction.

2SB1015A_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SB1015A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

109.40 KB

Description:

Silicon pnp transistor.

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2SB1015A 2SB1015A Silicon PNP Transistor Toshiba Semiconductor