2SB1015A Datasheet, Transistor, Toshiba Semiconductor

PDF File Details

Part number:

2SB1015A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

109.40kb

Download:

📄 Datasheet

Description:

Silicon pnp transistor.

2SB1015A Application

• Applications
• Low collector saturation voltage: VCE (sat) =
• 1.7 V (max) (IC =
• 3 A, IB =
• 0.3 A)
• Collec

TAGS

2SB1015A

Toshiba Semiconductor

📁 Related Datasheet

2SB1015 - Silicon PNP Transistor (Toshiba Semiconductor)
: SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. 10.3MAX. Unit in mm FEATURES . Low Collector Saturati.

2SB1015 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION ·With TO-220Fa package ·Collect.

2SB1015 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Comp.

2SB1010 - PNP Silicon Transistor (Rohm)
.

2SB1011 - Silicon PNP triple diffusion planar type Transistor (Panasonic Semiconductor)
Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features .

2SB1012 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier plementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2..

2SB1012K - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier plementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2..

2SB1016 - SILICON PNP TRANSISTOR (Toshiba)
: SILICON PNP TRIPLE DIFFUSED TYPE — POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter.

2SB1016 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High br.

2SB1016 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Comp.