2SB1016, Toshiba
:
SILICON PNP TRIPLE DIFFUSED TYPE
—
POWER AMPLIFIER APPLICATIONS.
FEATURES
.
High
Breakdown
Voltage
:
V^g =-100V (3
. Low Collector-Emitter.
2SB1011, Panasonic Semiconductor
Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
8.0+0.5 –0.1
Unit: mm
3.2±0.2
■ Features
.
2SB1015, Toshiba Semiconductor
:
SILICON PNP TRIPLE DIFFUSED TYPE
1
2SB1015
AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS.
10.3MAX.
Unit in mm
FEATURES
. Low Collector Saturati.