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2SB1016A Silicon PNP Transistor

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Description

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm * High breakdown voltage: VCEO = <.

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Applications

* 2SB1016A Unit: mm
* High breakdown voltage: VCEO =
* 100 V
* Low collector-emitter saturation voltage: VCE (sat) =
* 2.0 V (max)
* Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V

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