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2SB1016A Datasheet - Toshiba Semiconductor

2SB1016A Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm High breakdown voltage: VCEO = 100 V Low collector-emitter saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Col.

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Datasheet Details

Part number:

2SB1016A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

249.65 KB

Description:

Silicon pnp transistor.

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2SB1016A 2SB1016A Silicon PNP Transistor Toshiba Semiconductor

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