9
:
2SB1 01
1«
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
POWER AMPLIFIER APPLICATIONS.
FEATURES . Low Collector Saturation Vol tage
: VcE(sat)=-0,4V(Max.) a t I C=-4A . Complementary to 2SD1412
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO Vebo ic IB
PC
T.i
Tstg
ELECTRICAL CHARACTERISTICS (Ta =25°C)
RATING -70 -50
UNIT V V
-5 V
-7 A
-1 A
2.0 W
30
150
-55-150
°C °C
10.3MAX.
—7.0
.
h
03.2±O.2 /
' f
-i r
V)
d A n
d
H
2SB1019 Datasheet
