Datasheet Specifications
- Part number
- 2SB1019
- Manufacturer
- Toshiba ↗
- File Size
- 120.23 KB
- Datasheet
- 2SB1019-Toshiba.pdf
- Description
- SILICON PNP TRANSISTOR
Description
9 : 2SB1 01 1« SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.Unit in mm POWER AMPLIFIER APPLICATIONS.FEATUR.Features
* . Low Collector Saturation Vol tage : VcE(sat)=-0,4V(Max. ) a t I C=-4A . Complementary to 2SD1412 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction2SB1019 Distributors
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