* . Low Collector Saturation Vol tage : VcE(sat)=-0,4V(Max.) a t I C=-4A . Complementary to 2SD1412 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction
2SB1019
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Silicon pnp transistor.
9 : 2SB1 01 1« SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPLICATIONS. FEATUR.
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