* . High DC Current Gain : hFE=2000(Min.) (VCE=-2V, Ic=-1A) . Low Saturation Voltage : V CE ( sa t)=-1.5V(Max.) (I C=-1A, IB=-lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -80 V VCEO -80 V Emitter-Base Voltage VEBO -8 V C
2SB1034
85.63 KB
Silicon pnp transistor.
SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER)
2SB1 034
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICA.
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