Part number:
2SB1036
Manufacturer:
Panasonic Semiconductor
File Size:
37.46 KB
Description:
Pnp transistor.
* q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings
2SB1036
Panasonic Semiconductor
37.46 KB
Pnp transistor.
📁 Related Datasheet
2SB1030 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423 and 2SD1423A
Unit: mm
4.0±0.2.
2SB1030A - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423 and 2SD1423A
Unit: mm
4.0±0.2.
2SB1031 - Silicon PNP Transistor
(Hitachi Semiconductor)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SB1031 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB1031
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -8A ·Collector-Emitter Sustaining Volt.
2SB1031K - Silicon PNP Transistor
(Hitachi Semiconductor)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SB1032 - Silicon PNP Transistor
(Hitachi Semiconductor)
2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching plementary pair with 2SD1436(K)
Outline
TO-3P
2
1 1. Base 2. Collector (Flan.
2SB1032 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: = .
2SB1033 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1033
DESCRIPTION ·With TO-220 package ·Complemen.
