* q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings
* 30
* 60
* 25
* 50
* 7
* 1
* 0.5 300 150
* 55 ~ +150 Unit marking +0.2 0.45
2SB1030A
Panasonic Semiconductor
38.12 KB
Silicon pnp epitaxial planer type transistor.
Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423 and 2SD1423A
Unit: mm
4.0±0.2.
📁 Related Datasheet
2SB1030 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423 and 2SD1423A
Unit: mm
4.0±0.2.
2SB1031 - Silicon PNP Transistor
(Hitachi Semiconductor)
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2SB1031 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB1031
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -8A ·Collector-Emitter Sustaining Volt.
2SB1031K - Silicon PNP Transistor
(Hitachi Semiconductor)
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2SB1032 - Silicon PNP Transistor
(Hitachi Semiconductor)
2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching plementary pair with 2SD1436(K)
Outline
TO-3P
2
1 1. Base 2. Collector (Flan.
2SB1032 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: = .
2SB1033 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1033
DESCRIPTION ·With TO-220 package ·Complemen.
2SB1033 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1033
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage
.
