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2SB1030 - Silicon PNP Transistor

Features

  • q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings.
  • 30.
  • 60.
  • 25.
  • 50.
  • 7.
  • 1.
  • 0.5 300 150.
  • 55 ~ +150 Unit marking +0.2 0.45.
  • 0.1 0.7±0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collecto.

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Datasheet Details

Part number 2SB1030
Manufacturer Panasonic
File Size 38.12 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB1030 Datasheet
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Full PDF Text Transcription

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Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit marking +0.2 0.45–0.1 0.7±0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.
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