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2SB1011 Datasheet Silicon PNP Triple Diffusion Planar Type Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.

Key Features

  • High collector-base voltage (Emitter open) VCBO.
  • High collector-emitter voltage (Base open) VCEO.
  • Large collector power dissipation PC.
  • Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation J.

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