2SB1011 Description
Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 0.1 Unit:.
2SB1011 Key Features
- High collector-base voltage (Emitter open) VCBO
- High collector-emitter voltage (Base open) VCEO
- Large collector power dissipation PC
- Low collector-emitter saturation voltage VCE(sat)