q q q
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings.
120.
120.
5.
50.
20 300 150.
55 ~ +150 Unit V
1
2
3
1.27 1.27
V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
2.54±0.15
EIAJ:SC.
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Transistor
2SB1036
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
4.0±0.2
s Features
q q q
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –120 –120 –5 –50 –20 300 150 –55 ~ +150 Unit V
1
2
3
1.27 1.27
V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
2.54±0.
2SB1036 Datasheet
