2SB1030A
Overview
- 7±0.1
- 6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V
- 27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base
- 54±0.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB1030 2SB1030A 2SB1030 2SB1030A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = -20V, IE = 0 VCE = -20V, IB = 0 IC = -10µA, IE = 0 IC = -2mA, IB = 0 IE = -10µA, IC = 0 VCE = -10V, IC = -150mA*2 VCE = -10V, IC = -500mA*2 IC = -300mA, IB = -30mA*2 VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -30 -60 -25 -50 -7 85 40 - 0.35 200 6
- 2 min typ max - 0.1 -1
- 0±0.2 Unit µA µA V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance - 0.6 V MHz 15 pF Pulse measurement
- 1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC - Ta
