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2SB1030A - Silicon PNP epitaxial planer type Transistor

Download the 2SB1030A datasheet PDF. This datasheet also covers the 2SB1030 variant, as both devices belong to the same silicon pnp epitaxial planer type transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings.
  • 30.
  • 60.
  • 25.
  • 50.
  • 7.
  • 1.
  • 0.5 300 150.
  • 55 ~ +150 Unit marking +0.2 0.45.
  • 0.1 0.7±0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collecto.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1030_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB1030A
Manufacturer Panasonic
File Size 38.12 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SB1030A Datasheet

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Other Datasheets by Panasonic

Part Number Description
2SB1030 Silicon PNP Transistor
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2SB1011 Silicon PNP triple diffusion planar type Transistor
2SB1050 PNP Transistor
2SB1054 Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit marking +0.2 0.45–0.1 0.7±0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.