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2SB1070 - Silicon PNP epitaxial planar type Transistor

Key Features

  • Low collector-emitter saturation voltage VCE(sat).
  • High-speed switching.
  • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 4.4±0.5.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1070 2SB1070A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating.
  • 40.
  • 50.
  • 20.
  • 40.
  • 5.

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Datasheet Details

Part number 2SB1070
Manufacturer Panasonic
File Size 109.49 KB
Description Silicon PNP epitaxial planar type Transistor
Datasheet download datasheet 2SB1070 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors www.DataSheet4U.com 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching 8.5±0.2 Unit: mm 3.4±0.3 1.0±0.1 6.0±0.2 10.0±0.3 1.5±0.1 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1070 2SB1070A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 1.