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2SB1071 - PNP Transistor

Key Features

  • Low collector-emitter saturation voltage VCE(sat).
  • High-speed switching.
  • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 φ 3.1±0.1.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1071 2SB1071A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating.
  • 40.
  • 50.
  • 20.
  • 40.
  • 5.
  • 4.
  • 8 25 2 150.

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Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1071 2SB1071A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 2 150 −55 to +150 °C °C V A A W 1 2 3 Unit V Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 2.54±0.