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Power Transistors
2SB1071, 2SB1071A
Silicon PNP epitaxial planar type
For low-voltage switching
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
7.5±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1071 2SB1071A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 2 150 −55 to +150 °C °C V A A W
1 2 3
Unit V
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
14.0±0.5
0.8±0.1
2.54±0.
2SB1071A Datasheet
