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2SB1073 - PNP Transistor

Key Features

  • q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0.
  • 0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0.
  • 0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.