Galaxy Century Microelectronics 2SB1073
PNP Transistor
| Part No. | 2SB1073 |
|---|---|
| Datasheet | 2SB1073 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Low collector-emitter saturation voltage VCE(sat). Pb Lead-free● Large peak collector current ICP.
● Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification 2SB1073 ORDERING INFORMATION Type No. Marking 2SB1073 IQ/IR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -4 A ICP Peak collector current -7 A PC Collector Dissipation 1W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E076 Rev.A 1 Production specification PNP Epitaxial Planar Silicon Transistors 2SB1073
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT C
