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2SB1073 - PNP Transistor

Key Features

  • Low collector-emitter saturation voltage VCE(sat). Pb Lead-free.
  • Large peak collector current ICP.
  • Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification 2SB1073.

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PNP Epitaxial Planar Silicon Transistors FEATURES  Low collector-emitter saturation voltage VCE(sat). Pb Lead-free  Large peak collector current ICP.  Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification 2SB1073 ORDERING INFORMATION Type No. Marking 2SB1073 IQ/IR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -4 A ICP Peak collector current -7 A PC Collector Dissipation 1W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E076 Rev.A www.gmesemi.