| Part Number | 2SB1071 Datasheet |
|---|---|
| Manufacturer | Panasonic |
| Overview |
Power Transistors
2SB1071, 2SB1071A
Silicon PNP epitaxial planar type
For low-voltage switching
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
■ Features
• Low collector-emitter saturat.
* Low collector-emitter saturation voltage VCE(sat) * High-speed switching * Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 φ 3.1±0.1 * Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1071 2SB1071A VCEO VEBO IC ICP P. |
2SB1071 Datasheet and Specifications PDF
The 2SB1071 is a PNP Transistor.
Key Specifications
| Height | 0 m |
|---|---|
| Length | 0 m |
| Width | 0 m |
| Max Operating Temp | 150 °C |
| Part Number | 2SB1071 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching applications PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Absolute maxim. ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A ; VCE=-5V CONDITIONS 2SB1071 2SB1071A SYMBOL MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.5 -1.5 -50 -50 45 60 150 260 MHz V V µA µA VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter. |
| Part Number | 2SB1071 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -2A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for .
Saturation Voltage IC= -2A; IB= -0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -2V
hFE-2
DC Current Gain
IC= -1A; VCE= -2V
* hFE-2 Class. |