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2SB1070A - PNP Transistors

Key Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • High-speed switching. TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 0 .15 1 .5 0 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.15 5 .5 5 -0.15 3.80 Unit: mm + 2.65 0.25 -0.1 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 + 0.2 9 .7 0 -0.2 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Base 2 Collector 3 Emitter.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter -.

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SMD Type PNP Transistors 2SB1070A Transistors ■ Features ● Low collector-emitter saturation voltage VCE(sat). ● High-speed switching. TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 0 .15 1 .5 0 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.15 5 .5 5 -0.15 3.80 Unit: mm + 2.65 0.25 -0.1 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 + 0.2 9 .7 0 -0.2 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector current -Pulse Collector Power Dissipation Junction Temperature Storage Temperature range Symbol Rating Unit VCBO -50 VCEO -40 V VEBO -5 IC -4 A ICP -8 PC 1.