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2SB1011 - Silicon PNP triple diffusion planar type Transistor

Datasheet Summary

Features

  • High collector-base voltage (Emitter open) VCBO.
  • High collector-emitter voltage (Base open) VCEO.
  • Large collector power dissipation PC.
  • Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation J.

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Datasheet Details

Part number 2SB1011
Manufacturer Panasonic Semiconductor
File Size 87.25 KB
Description Silicon PNP triple diffusion planar type Transistor
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Full PDF Text Transcription

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Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −400 −400 −5 −100 −200 1.2 150 −55 to +150 Unit V V V 1 2 3 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.
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