2SB1016 Datasheet - Toshiba

2SB1016, SILICON PNP TRANSISTOR

: SILICON PNP TRIPLE DIFFUSED TYPE * POWER AMPLIFIER APPLICATIONS..

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Datasheet Details

Part number:

2SB1016

Manufacturer:

Toshiba ↗

File Size:

86.34 KB

Description:

SILICON PNP TRANSISTOR

Features

* . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max. ) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em

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2SB1016 SILICON PNP TRANSISTOR Toshiba

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