2SB1016 - SILICON PNP TRANSISTOR
2SB1016 Features
* . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em
