2SB1016 Datasheet, Transistor, Toshiba

2SB1016 Features

• Transistor . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Aud

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2SB1016

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Toshiba ↗

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📄 Datasheet

Description:

Silicon pnp transistor.

2SB1016 Application

• Applications FEATURES . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max.) . Compl

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2SB1016

Toshiba

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