2SB1016 SILICON PNP TRANSISTOR

Toshiba

Description

: SILICON PNP TRIPLE DIFFUSED TYPE * POWER AMPLIFIER APPLICATIONS..

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Datasheet Specifications

Part number: 2SB1016
Manufacturer: Toshiba ↗
File Size: 86.34 KB
Datasheet: 2SB1016-Toshiba.pdf
Description: SILICON PNP TRANSISTOR

Features

* . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max. ) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em

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2SB1016 SILICON PNP TRANSISTOR Toshiba

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