Datasheet4U Logo Datasheet4U.com

2SB1016 - SILICON PNP TRANSISTOR

Datasheet Summary

Features

  • . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max. ) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage.

📥 Download Datasheet

Datasheet preview – 2SB1016

Datasheet Details

Part number 2SB1016
Manufacturer Toshiba
File Size 86.34 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 2SB1016 Datasheet
Additional preview pages of the 2SB1016 datasheet.

📁 Similar Datasheet

  • 2SB1016 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1016 - PNP Transistor (INCHANGE)
  • 2SB1016A - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SB1010 - PNP Silicon Transistor (Rohm)
  • 2SB1011 - Silicon PNP triple diffusion planar type Transistor (Panasonic Semiconductor)
  • 2SB1012 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SB1012K - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SB1015 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SB1015 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1015 - PNP Transistor (INCHANGE)
Other Datasheets by Toshiba
  • 2SB1017 - SILICON PNP TRANSISTOR
  • 2SB1018 - SILICON PNP TRANSISTOR
  • 2SB1019 - SILICON PNP TRANSISTOR
  • 2SB1024 - PNP Transistor
  • 2SB1034 - SILICON PNP TRANSISTOR
  • 2SB1641 - Silicon PNP Epitaxial Transistor
  • 2SB1682 - Silicon PNP Triple Diffused Type Transistor
  • 2SB502A - SILICON PNP TRANSISTOR

Full PDF Text Transcription

Click to expand full text
: SILICON PNP TRIPLE DIFFUSED TYPE — POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO Vebo ic IB PC T j T stg RATING -100 -100 -5 -5 -0.5 30 150 -55-150 UNIT V V V A A W °C °C Unit in mm 10.3MAX 7.0 03.2±O.2 /. l~T"~l 13J k ! r 3n :~ ci <1 o s to ! - 1 1.4 + 125 0.76- 11 5 ' il .! 4 1" M S 2.54±0.25 mo 2.
Published: |