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2SB1016 - SILICON PNP TRANSISTOR

2SB1016 Description

: SILICON PNP TRIPLE DIFFUSED TYPE * POWER AMPLIFIER APPLICATIONS..

2SB1016 Features

* . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max. ) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em

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SILICON PNP TRANSISTOR Toshiba
Toshiba 2SB1016-like datasheet