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2SB1018 - SILICON PNP TRANSISTOR

2SB1018 Description

: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.Unit in mm POWER AMPLIFIER APPLICATIONS..

2SB1018 Features

* . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max. ) at I C=-4A . Complementary to 2SD1411 MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic

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SILICON PNP TRANSISTOR Toshiba
Toshiba 2SB1018-like datasheet