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2SB1018 - SILICON PNP TRANSISTOR

Datasheet Summary

Features

  • . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max. ) at I C=-4A . Complementary to 2SD1411.

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Datasheet Details

Part number 2SB1018
Manufacturer Toshiba
File Size 118.81 KB
Description SILICON PNP TRANSISTOR
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: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max.) at I C=-4A . Complementary to 2SD1411 MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation Ta=25°C Tc=25°C PC Junction Temperature Tj Storage Temperature Range T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING UNIT -100 V -80 V -5 V -7 A -1 A 2.0 W 30 150 °C -55^150 °C 10.3MAX. 11* i K[ J no.2 IS rt en a 3 -H o id : 1.2 H1.4 + Q25 \ 0.76-0.15 1 ii J M55 S -i 2.54x0.
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