Datasheet Specifications
- Part number
- 2SB1018
- Manufacturer
- Toshiba ↗
- File Size
- 118.81 KB
- Datasheet
- 2SB1018-Toshiba.pdf
- Description
- SILICON PNP TRANSISTOR
Description
: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.Unit in mm POWER AMPLIFIER APPLICATIONS..
Features
* . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max. ) at I C=-4A . Complementary to 2SD1411 MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic2SB1018 Distributors
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