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2SB1015 Datasheet - Toshiba Semiconductor

2SB1015 - Silicon PNP Transistor

2SB1015 Features

* . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO

2SB1015_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SB1015

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

90.27 KB

Description:

Silicon pnp transistor.

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