Part number:
2SB1015
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
90.27 KB
Description:
Silicon pnp transistor.
* . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO
2SB1015
Toshiba ↗ Semiconductor
90.27 KB
Silicon pnp transistor.
📁 Related Datasheet
2SB1010 - PNP Silicon Transistor
(Rohm)
.
2SB1011 - Silicon PNP triple diffusion planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
8.0+0.5 –0.1
Unit: mm
3.2±0.2
■ Features
.
2SB1012 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier plementary pair with 2SD1376(K)
Outline
TO-126 MOD
2
3 1. Emitter 2..
2SB1012K - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier plementary pair with 2SD1376(K)
Outline
TO-126 MOD
2
3 1. Emitter 2..
2SB1015 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1015
DESCRIPTION ·With TO-220Fa package ·Collect.
2SB1015 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1015
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Comp.
2SB1015A - Silicon PNP Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1015A
2SB1015A
Audio Frequency Power Amplifier Applications
· Low collector saturation volta.
2SB1016 - SILICON PNP TRANSISTOR
(Toshiba)
:
SILICON PNP TRIPLE DIFFUSED TYPE
—
POWER AMPLIFIER APPLICATIONS.
FEATURES
.
High
Breakdown
Voltage
:
V^g =-100V (3
. Low Collector-Emitter.
