2SB1375 Datasheet - Toshiba Semiconductor

2SB1375 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A, IB = 0.2 A) High power dissipation: PC = 25 W (Tc = 25°C) Collector metal (fin) is covered with mold resin Complementary to 2SD2012 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Em.

2SB1375_ToshibaSemiconductor.pdf