* 0.15 0.7 4.0 0.8 Unit nA µA V V V
* 25
* 20
* 7 90 25
* 0.4
* 1.2 350 V V MHz VCB =
* 10V, IE = 50mA, f = 200MHz VCB =
* 10V, IE = 0, f = 1MHz 25 pF Pulse measurement FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 S 180 ~ 350 Rank hFE1
2SB1378
Panasonic Semiconductor
39.40 KB
Silicon pnp transistor.
Transistor
2SB1378
Silicon PNP epitaxial planer type
For low-frequency power amplification Complementary to 2SD1996
6.9±0.1
Unit: mm
1.05 2.5±0.1 (1.
📁 Related Datasheet
2SB1370 - Power Transistor
(Rohm)
.
2SB1370 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1370
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide.
2SB1370 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1370
·
DESCRIPTION ·With TO-220Fa package ·PC=2W.
2SB1370 - PNP Transistors
(LGE)
2SB1370(PNP)
TO-220F Bipolar Transistors
TO-220F
1. BASE
2. COLLECTOR
123
3. EMITTE
Features
Breakdown Voltage High Reverse Cut-off Current Smal.
2SB1370 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SB1370(BR3CA1370F)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package.
/ Features ,。 Lo.
2SB1371 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1371
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD2064
Unit: mm
q
q q q
16.2±0.5.
2SB1371 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1371
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area .
2SB1371 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3PFa package ·Complement to type.
