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2SB1320A - Silicon PNP Transistor

Datasheet Summary

Features

  • High forward current transfer ratio hFE.
  • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45.
  • 0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating.
  • 60.

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Datasheet Details

Part number 2SB1320A
Manufacturer Panasonic Semiconductor
File Size 73.97 KB
Description Silicon PNP Transistor
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Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD1991A I Features • High forward current transfer ratio hFE • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −60 −50 −7 −200 −100 400 150 −55 to +150 Unit V V V mA mA mW °C °C 1 2 3 0.45−0.05 2.5±0.5 2.5±0.5 +0.
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