q q q
1.5
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
Symbol VCBO VCEO VEBO ICP IC PC.
Tj Tstg
Ratings.
30.
20.
7.
8.
5 1 150.
55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
3
2
1
2.5
2.5
1:Base 2:Collector 3:Emitter
EIAJ:SC.
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Transistor
2SB1319
Silicon PNP epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9±0.1
0.4
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings –30 –20 –7 –8 –5 1 150 –55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
3
2
1
2.5
2.5
1:Base 2:Collector 3:Emitter
EIAJ:SC–71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.
2SB1319 Datasheet
