q q q q
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings.
180.
180.
5.
25.
15 150 3.5 150.
55 to +150 Unit V V V A
26.0±0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base volt.
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Power Transistors
2SB1317
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD1975
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings –180 –180 –5 –25 –15 150 3.5 150 –55 to +150 Unit V V V A
26.0±0.5
10.0
1.5
2.0
4.0
1.
2SB1317 Datasheet
