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2SB1324 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature.
  • Mounted on cerami.

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Datasheet Details

Part number 2SB1324
Manufacturer Guangdong Kexin
File Size 85.04 KB
Description PNP Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SB1324 Datasheet

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SMD Type www.DataSheet4U.com Transistors PNP Epitaxial Planar Silicon Transistors 2SB1324 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -40 -30 -6 -3 -5 1.5 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type www.DataSheet4U.