2SB1326 Description
VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) plements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units:.