2SB1326 Overview
VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) plements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units:.
| Part number | 2SB1326 |
|---|---|
| Datasheet | 2SB1326_Rohm.pdf |
| File Size | 155.14 KB |
| Manufacturer | ROHM |
| Description | Low Frequency Transistor |
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VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) plements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units:.
| Part Number | Description |
|---|---|
| 2SB1329 | PNP Transistor |
| 2SB1308 | Power Transistor |
| 2SB1316 | Power Transistor |
| 2SB1330 | TRANSISTORS |
| 2SB1331 | TRANSISTORS |
| 2SB1332 | TRANSISTORS |
| 2SB1333A | TRANSISTORS |
| 2SB1334 | Epitaxial Planar PNP Silicon Transistor |
| 2SB1340 | Power Transistor |
| 2SB1342 | Power Transistor |