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2SB1325 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature.
  • Mounted on ceramic boa.

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Datasheet Details

Part number 2SB1325
Manufacturer Guangdong Kexin
File Size 85.08 KB
Description PNP Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SB1325 Datasheet

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SMD Type www.DataSheet4U.com Transistors PNP Epitaxial Planar Silicon Transistors 2SB1325 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board (250mm X0.8mm) 2 Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -25 -20 -6 -4 -6 1.5 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type www.DataSheet4U.