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2SB1372 - PNP Transistor

2SB1372 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1372 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

2SB1372 Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICP Collector Current-Pulse C

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Datasheet Details

Part number
2SB1372
Manufacturer
INCHANGE
File Size
197.72 KB
Datasheet
2SB1372-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1372-like datasheet