2SB1020A Datasheet - Toshiba Semiconductor

2SB1020A Silicon PNP Transistor

2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SD1415A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collec.

2SB1020A_ToshibaSemiconductor.pdf