2SB1018A Datasheet - Toshiba Semiconductor

2SB1018A TRANSISTOR

www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm High collector current: IC = 7 A Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector.

2SB1018A_ToshibaSemiconductor.pdf