2SB1018A Datasheet - Toshiba Semiconductor

2SB1018A, TRANSISTOR

www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Am.

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2SB1018A_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SB1018A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

203.41 KB

Description:

TRANSISTOR

Applications

* Power Amplifier Applications Unit: mm
* High collector current: IC =
* 7 A Low collector saturation voltage: VCE (sat) =
* 0.5 V (max) (IC =
* 4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltag

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