2SB1012 - Silicon PNP Epitaxial Transistor

Hitachi Semiconductor

Datasheet Details

Part number	2SB1012
Manufacturer	Hitachi Semiconductor
File Size	33.52 KB
Description	Silicon PNP Epitaxial Transistor
Datasheet	2SB1012 Datasheet
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2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 5 kΩ (Typ) 1 kΩ (Typ) 1 1 2 3 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Rating –120 –120 –7 –1.5 –3.0 20 150 –55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min –120 –7 — — 2000 — — — — — — — Typ — — — — — — — — — — 0.5 2.0 Max — — –100 –10 30000 –1.5 –2.0 –2.

Published: Mar 22, 2005 |