Datasheet4U Logo Datasheet4U.com

2SB1067 Datasheet - Toshiba Semiconductor

2SB1067 PNP Transistor

2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) 2SB1067 Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Industrial Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit C.

2SB1067_ToshibaSemiconductor.pdf

Preview of 2SB1067 PDF
2SB1067 Datasheet Preview Page 2 2SB1067 Datasheet Preview Page 3

Datasheet Details

Part number:

2SB1067

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

186.13 KB

Description:

Pnp transistor.

📁 Related Datasheet

2SB1061 Silicon PNP Triple Diffused Type Transistor (Hitachi Semiconductor)

2SB1062 Si PNP Epitaxial Plannar Transistor (ETC)

2SB1063 Silicon PNP Transistor (Panasonic Semiconductor)

2SB1063 PNP Transistor (INCHANGE)

2SB1063 SILICON POWER TRANSISTOR (SavantIC)

2SB1064 Epitaxial Planar PNP Silicon Transistor (Rohm)

2SB1064 PNP Transistor (INCHANGE)

2SB1064 SILICON POWER TRANSISTOR (SavantIC)

TAGS

2SB1067 2SB1067 PNP Transistor Toshiba Semiconductor

2SB1067 Distributor