2SB1067 Datasheet - Toshiba Semiconductor

2SB1067 PNP Transistor

2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) 2SB1067 Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Industrial Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit C.

2SB1067 Datasheet (186.13 KB)