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Power Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q
15.0±0.3 3.0±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings –40 –50 –20 –40 –5 –8 –4 25 2 150 –55 to +150 Unit V
13.7–0.2
+0.5
4.1±0.2 8.0±0.2 Solder Dip
Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.