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Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q q q
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit
Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.1±0.2 8.0±0.2 Solder Dip
s Absolute Maximum Ratings
15.0±0.3
3.0±0.2
13.7–0.2
+0.5
V
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.
2SB1605A Datasheet
