Ø Ø 2SB166100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction fo
2SB166100MA_SilanMicroelectronicsJoint-stock.pdf
Datasheet Details
2SB166100MA, 2SB166100MA_SilanMicroelectronicsJoint
Silan Microelectronics Joint-stock
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Low ir schottky barrier diode chips.
This datasheet PDF includes multiple part numbers: 2SB166100MA, 2SB166100MA_SilanMicroelectronicsJoint.
Please refer to the document for exact specifications by model.
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