Datasheet4U Logo Datasheet4U.com

2SB760 PNP Transistor

2SB760 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

2SB760 Applications

* Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak PC Col

📥 Download Datasheet

Preview of 2SB760 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB760
Manufacturer
INCHANGE
File Size
213.08 KB
Datasheet
2SB760-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB761 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB761A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB762 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB762A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB763 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB764 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB764L - PNP Transistor (SeCoS)
  • 2SB765 - Silicon PNP Transistor (Hitachi Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB760-like datasheet