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2SB713 - PNP Transistor

2SB713 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). Good Linearity of hFE. High Power Dissipation. Complement to Type 2SD751.

2SB713 Applications

* Designed for high power audio frequency amplifier use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector C

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Datasheet Details

Part number
2SB713
Manufacturer
INCHANGE
File Size
217.39 KB
Datasheet
2SB713-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB713-like datasheet