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2SB719 - PNP Transistor

2SB719 Description

isc Silicon PNP Power Transistor 2SB719 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Wide Area of Safe Operation. Complement to Type 2SD759. Minimum Lot.

2SB719 Applications

* Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -

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Datasheet Details

Part number
2SB719
Manufacturer
INCHANGE
File Size
212.59 KB
Datasheet
2SB719-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB719-like datasheet