2SB719 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB719 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Wide Area of Safe Operation. Complement to Type 2SD759. Minimum Lot.

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Datasheet Specifications

Part number: 2SB719
Manufacturer: INCHANGE
File Size: 212.59 KB
Datasheet: 2SB719-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -

2SB719 Distributors

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2SB719 PNP Transistor INCHANGE

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