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2SB762 PNP Transistor

2SB762 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

2SB762 Applications

* Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SB762
Manufacturer
INCHANGE
File Size
213.07 KB
Datasheet
2SB762-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB762-like datasheet